1 edition 1.2 july 1999 FLL300IL-1, fll300il-2, fll300il-3 l-band medium & high power gaas fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 100 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 80.4 and -17.4 ma respectively with gate resistance of 25 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. item saturated drain current transconductance pinch-off voltage gate source breakdown voltage drain current output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss -1216 - 6000 - -1.0 -2.0 -3.5 -5 -- 10.0 12.0 - - 6.0 8.0 43.0 44.5 - v ds = 5v, i ds = 720ma v ds = 5v, i ds = 7200ma v ds = 5v, v gs = 0v i gs = -720 a v ds = 10v i ds = 0.5 i dss (typ.) v ds = 10v i ds = 0.5 i dss (typ.) a ms v db 11.0 13.0 - db 8.0 10.0 - db a dbm v g m v p v gso p 1db FLL300IL-1 fll300il-2 fll300il-3 g 1db i dsr power added efficiency -44 - % r th test conditions* unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) thermal resistance - 1.1 1.5 channel to case (10v x i ds r - p out + p in) x r th c/w add channel temperature rise --80 c ? t ch * under fixed vgs bias condition case style: il FLL300IL-1 fll300il-2 fll300il-3 f=900mhz f=1.8ghz f=2.6ghz f=900mhz f=1.8ghz f=2.6ghz g.c.p.: gain compression point features ?high output power: p 1db = 44.5dbm (typ.) ?high gain: g 1db = 12.0db (typ.)@1.8ghz (fll300il-2) ?high pae: add = 44% (typ.) ?proven reliability ?hermetically sealed package description the FLL300IL-1, fll300il-2, fll300il-3 are power gaas fets that are specifically designed to provide high power at l-band frequencies with gain, linearity and efficiency superior to that of silicon devices. the performance in multitone environments for class ab operation make them ideally suited for base station applications. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLL300IL-1, fll300il-2, fll300il-3 l-band medium & high power gaas fet power derating curve drain current vs. drain-source voltage 60 40 20 100 120 80 0 50 100 150 200 2 046810 case temperature ( c) drain-source voltage (v) total power dissipation (w) 6 3 12 9 drain current (a) v gs =0v -0.5v -1.5v -2.0v -1.0v
3 FLL300IL-1 l-band medium & high power gaas fet output power vs. input power v ds =10v i ds 0.5 i dss f = 0.9 ghz 23 25 27 29 31 33 input power (dbm) 46 44 42 40 38 36 30 45 60 15 0 output power (dbm) add p out add (%) +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 1 2 1.5ghz 1.5ghz 1.5ghz 1.5ghz 1.0 1.3 1.0 1.0 1.0 .02 .01 250 50 ? 100 10 25 scale for |s 21 | scale for |s 12 | 0.5ghz 0.5ghz 0.5ghz s-parameters v ds = 10v, i ds = 6000ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 500 .961 176.7 1.318 70.0 .005 26.1 .889 174.0 600 .957 174.7 1.162 64.9 .005 26.6 .884 173.0 700 .956 172.5 1.053 59.9 .006 33.0 .880 171.7 800 .955 170.6 .989 55.1 .007 32.2 .871 170.5 900 .948 168.2 .951 49.6 .008 28.6 .865 169.5 1000 .943 166.0 .944 44.5 .009 25.7 .855 167.7 1100 .933 161.9 .952 37.9 .010 32.6 .841 167.0 1200 .923 158.8 .975 31.7 .012 25.2 .828 165.1 1300 .910 155.1 1.021 24.7 .015 23.1 .810 163.3 1400 .898 151.0 1.094 16.8 .017 19.7 .789 161.1 1500 .875 145.8 1.182 8.4 .023 15.1 .760 158.9
4 fll300il-2 l-band medium & high power gaas fet +j250 +j100 +j50 +j25 +j10 0 1.2 1.4 2.0 1.2 1.6 1.8 1.6 2.2 2.0 1.8 2.4 2.4 2.6 2.8 3.0 3.0 2.8 1.8 2.0 2.2 2.4 2.6 2.8 2.0 2.2 2.4 2.6 2.8 1.2 1.2 3.0 3.0 1.8 1.6 1.4 1.6 2.6 2.2 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 c 0 -90 c s 21 s 12 0.2 0.1 1 2 3 4 5 250 100 10 25 50 ? scale for |s 21 | scale for |s 12 | output power vs. input power v ds =10v i ds 0.5 i dss f = 1.8 ghz 24 26 28 30 32 34 input power (dbm) 46 44 42 40 38 36 30 45 60 15 0 output power (dbm) add p out add (%) s-parameters v ds = 10v, i ds = 6000ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1000 .953 167.2 .788 34.0 .003 -32.3 .869 169.9 1100 .944 164.6 .811 28.0 .005 -31.6 .864 169.0 1200 .933 161.0 .882 21.5 .006 -50.9 .859 167.9 1300 .923 157.3 .997 14.0 .007 -50.6 .857 166.2 1400 .903 153.3 1.169 5.3 .008 -60.5 .850 165.2 1500 .864 148.3 1.419 -6.9 .010 -71.2 .853 164.7 1600 .788 142.2 1.752 -23.0 .014 -86.6 .868 162.7 1700 .654 137.8 2.179 -45.3 .018 -109.7 .889 160.0 1800 .506 144.5 2.526 -74.2 .023 -136.9 .923 155.3 1900 .522 161.1 2.523 -104.9 .024 -167.7 .907 148.1 2000 .652 162.2 2.249 -131.4 .022 165.4 .852 141.8 2100 .716 154.3 1.946 -149.5 .021 148.1 .789 136.7 2200 .746 150.0 1.984 -167.8 .023 129.7 .730 130.5 2300 .771 139.4 1.902 171.9 .022 110.3 .644 124.2 2400 .763 125.1 1.887 152.6 .023 91.3 .555 117.9 2500 .722 106.2 1.935 133.4 .025 71.1 .460 113.5 2600 .626 75.9 1.998 106.5 .027 41.9 .323 103.1 2700 .508 23.4 1.932 73.3 .026 9.1 .161 89.3 2800 .544 -45.8 1.613 36.7 .021 -25.1 .031 -62.8 2900 .686 -94.8 1.136 3.4 .016 -63.2 .210 -105.9 3000 .791 -123.6 .726 -22.0 .010 -90.8 .370 -118.5
5 fll300il-3 l-band medium & high power gaas fet output power vs. input power v ds =10v i ds 0.5 i dss f = 2.6 ghz 26 28 30 32 34 36 input power (dbm) 46 44 42 40 38 36 30 45 60 15 0 output power (dbm) add p out add (%) +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 1 2 3 4 1.5ghz 1.5ghz 2.5 2.5 3.5 3.5 3.0 3.0 2.0 3.0 3.0 2.0 2.0 2.5 2.5 3.5 3.5 1.5 1.5 .02 .03 .04 .01 10 25 scale for |s 21 | scale for |s 12 | 50 ? 100 250 s-parameters v ds = 10v, i ds = 6000ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 1500 .902 130.6 1.169 -3.1 .009 -55.7 .854 155.0 1600 .872 123.3 1.324 -13.4 .010 -69.8 .852 153.2 1700 .829 114.2 1.539 -25.8 .012 -81.5 .847 150.7 1800 .756 102.9 1.824 -40.5 .016 -96.1 .847 148.5 1900 .645 88.8 2.199 -57.7 .019 -113.4 .854 146.1 2000 .463 71.7 2.604 -78.8 .024 -134.7 .860 142.2 2100 .217 54.5 2.939 -103.5 .028 -160.3 .867 137.4 2200 .065 173.9 3.080 -129.4 .031 173.7 .848 131.6 2300 .285 175.2 3.055 -153.9 .032 150.2 .808 125.3 2400 .441 157.4 2.938 -176.2 .032 128.8 .752 119.7 2500 .523 137.6 2.843 166.5 .032 110.8 .700 119.6 2600 .560 119.7 2.768 146.9 .033 91.6 .628 113.6 2700 .583 99.3 2.791 126.7 .035 72.2 .550 109.0 2800 .578 72.8 2.840 104.2 .036 49.8 .461 102.5 2900 .564 37.9 2.854 79.1 .039 28.0 .348 94.4 3000 .564 -4.7 2.789 51.3 .039 0.5 .208 91.8 3100 .605 -44.2 2.536 20.3 .039 -33.2 .081 125.9 3200 .731 -80.2 1.981 -9.0 .031 -63.6 .132 -167.4 3300 .813 -109.5 1.502 -32.7 .023 -88.0 .253 -158.6 3400 .864 -131.0 1.130 -52.7 .019 -106.9 .345 -162.2 3500 .895 -147.1 .853 -69.8 .013 -121.2 .408 -168.1
6 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL300IL-1, fll300il-2, fll300il-3 l-band medium & high power gaas fet 4-r 1.3 0.15 (0.051) 1.0 (0.039) 16.4 (0.646) 20.4 0.2 (0.803) 24 0.2 (0.945) 5.5 max. (0.217) 2.4 0.15 (0.094) 0.1 (0.004) 1.9 (0.075) 17.4 0.25 (0.685) 8.0 0.15 (0.315) 2.0 min. (0.079) 2.0 min. (0.079) case style "il" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 3 4 2
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